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Segregation of mobile ions on insulator-semiconductor interfaces in metal-insulator-semiconductor structures

Semiconductors, ISSN: 1063-7826, Vol: 36, Issue: 2, Page: 197-202
2002
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The equilibrium distribution of mobile ions was considered in metal-insulator-semiconductor (MIS) structures with ionic surface states at the insulator-semiconductor interface. The quasi-steady current-voltage characteristics were calculated for ion currents in MIS structures. The population of surface states by ions was described by the Gibbs distribution. © 2002 MAIK "Nauka/Interperiodica".

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