Spectra of second-order Raman scattering in porous silicon
Journal of Experimental and Theoretical Physics, ISSN: 1063-7761, Vol: 94, Issue: 4, Page: 739-744
2002
- 4Citations
- 9Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
Spectra of second-order Raman scattering in porous silicon are investigated. A band shift towards lower energies in second-order spectra is observed, as well as the correlation between the values of band shift in first- and second-order spectra. It is demonstrated that the observed effect cannot be interpreted using the conventional concepts of the mechanisms of scattering in microcrystalline samples. An interpretation of the revealed effect is suggested. © 2002 MAIK "Nauka/Interperiodica".
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=23044534144&origin=inward; http://dx.doi.org/10.1134/1.1477898; http://link.springer.com/10.1134/1.1477898; http://link.springer.com/content/pdf/10.1134/1.1477898; http://link.springer.com/content/pdf/10.1134/1.1477898.pdf; http://link.springer.com/article/10.1134/1.1477898/fulltext.html; https://dx.doi.org/10.1134/1.1477898; https://link.springer.com/article/10.1134/1.1477898
Pleiades Publishing Ltd
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