Control of charge transport mode in the Schottky barrier by δ-doping: Calculation and experiment for Al/GaAs
Semiconductors, ISSN: 1063-7826, Vol: 36, Issue: 5, Page: 505-510
2002
- 35Citations
- 4Captures
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Article Description
The possibility of controlling the effective barrier height in Schottky diodes by introducing a δ-doped layer near the metal-semiconductor contact is considered. A decrease in the effective barrier height is caused by the increased role of carrier tunneling through the barrier. A complete quantum-mechanical numerical simulation of the effect of the δ-layer parameters (concentration and depth) on the current-voltage characteristics of modified diodes was carried out for the Schottky barrier contacts to n-GaAs. The simulation results were found to fit well the experimental characteristics of diodes produced by metal-organic chemical vapor epitaxy. The studies carried out made it possible to choose the optimal δ-layer parameters to produce low-barrier (about 0.2 eV) diodes with a reasonable nonideality factor (n ≤1.5). Such structures can be employed to fabricate microwave detector diodes without bias. © 2002 MAIK "Nauka/Interperiodica".
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0036588653&origin=inward; http://dx.doi.org/10.1134/1.1478540; http://link.springer.com/10.1134/1.1478540; http://link.springer.com/content/pdf/10.1134/1.1478540; http://link.springer.com/content/pdf/10.1134/1.1478540.pdf; http://link.springer.com/article/10.1134/1.1478540/fulltext.html; https://dx.doi.org/10.1134/1.1478540; https://link.springer.com/article/10.1134/1.1478540
Pleiades Publishing Ltd
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