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Simulation of the electrical properties of polycrystalline ceramic semiconductors with submicrometer grain sizes

Semiconductors, ISSN: 1063-7826, Vol: 39, Issue: 5, Page: 577-584
2005
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Article Description

A numerical model for the calculation of the electrical characteristics of polycrystalline ceramic semiconductors is suggested. The model is applicable in a situation where the average grain size is comparable with the depletion region width near a grain boundary and the double Schottky barriers of neighboring boundaries overlap. The two-dimensional calculation is carried out in the diffusion-drift approximation using the Voronoi grid method. The effect of crystalline grain size on the current-voltage characteristic and specific capacitance of the material is analyzed using p-SrTiO"3 as an example. © 2005 Pleiades Publishing, Inc.

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