Probing of local electron states in PbSnTe(In) narrow-gap semiconductors by laser terahertz radiation
JETP Letters, ISSN: 0021-3640, Vol: 97, Issue: 12, Page: 720-726
2013
- 9Citations
- 4Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
Local electron states in indium-doped lead telluride-based solid solutions exhibit a number of features which separate them from the diversity of impurity states in semiconductors. These features are most pronounced in terahertz photoconductivity. The results of the corresponding experiments performed during the last years and supported by the Russian Foundation for Basic Research are reviewed. © 2013 Pleiades Publishing, Ltd.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84881566575&origin=inward; http://dx.doi.org/10.1134/s0021364013120102; http://link.springer.com/10.1134/S0021364013120102; http://link.springer.com/content/pdf/10.1134/S0021364013120102; https://dx.doi.org/10.1134/s0021364013120102; https://link.springer.com/article/10.1134/S0021364013120102
Pleiades Publishing Ltd
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