A distribution of Ga ions in a silicon substrate for nano-dimensional masking
Russian Microelectronics, ISSN: 1063-7397, Vol: 43, Issue: 1, Page: 15-20
2014
- 5Citations
- 7Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
A nano-dimensional doping method of near-surface silicon layers using the focused ion beam was studied by software tools based on mathematical calculations of ion ranges in crystals. The sizes of local doping regions and concentrations of impurity atoms as function of real process parameters of the nano-dimensional exposure to the ion gallium beam are calculated. Theoretical boundaries of process doping parameters, taking silicon sputtering into consideration are determined. © 2014 Pleiades Publishing, Ltd.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84893911383&origin=inward; http://dx.doi.org/10.1134/s1063739713060036; http://link.springer.com/10.1134/S1063739713060036; http://link.springer.com/content/pdf/10.1134/S1063739713060036; http://link.springer.com/content/pdf/10.1134/S1063739713060036.pdf; http://link.springer.com/article/10.1134/S1063739713060036/fulltext.html; https://dx.doi.org/10.1134/s1063739713060036; https://link.springer.com/article/10.1134/S1063739713060036
Pleiades Publishing Ltd
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