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Electrophysical and photoelectrical properties of MIS structures based on MBE grown heteroepitaxial HgCdTe MIS structures with inhomogeneous composition distribution

Russian Microelectronics, ISSN: 1608-3415, Vol: 43, Issue: 8, Page: 552-558
2014
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Article Description

The electrophysical and photoelectrical properties of MIS structures are studied using MBE grown heteroepitaxial HgCdTe with inhomogeneous composition distribution. It is shown that surface varib- and layers with increased surface CdTe composition in n-HgCdTe-based MIS structures (x = 0.21–0.23) strongly affect the dependences of capacity and photo-emf on the voltage bias and frequency. Parameters of n-HgCdTe-based MIS structures with periodic barrier-type regions of increased CdTe composition are studied, and their effect is shown on the parameters of MIS structures when they are located near the dielectric-semiconductor interface. Electrical properties of n-HgCdTe-based MIS structures (x = 0.62–0.73) with potential-well regions of decreased CdTe composition in the surface region are studied.

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