Growth of 4H-polytype silicon carbide ingots on (101̄0) seeds
Semiconductors, ISSN: 1063-7826, Vol: 42, Issue: 12, Page: 1450-1453
2008
- 3Citations
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Article Description
The growth of 4 H-polytype silicon carbide ingots by the modified Lely method on (101̄0) seeds has been investigated. It is shown that this seed plane allows intense ingot outgrowth. Single-crystal ingots up to 60 mm in diameter can be obtained at growth rates below 0.6 mm/h. Investigation of the defect structure showed that the grown ingots are practically micropipe-free but contain stacking faults and carbon inclusions. © 2008 Pleiades Publishing, Ltd.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=57749182631&origin=inward; http://dx.doi.org/10.1134/s1063782608120142; http://link.springer.com/10.1134/S1063782608120142; http://link.springer.com/content/pdf/10.1134/S1063782608120142; http://link.springer.com/content/pdf/10.1134/S1063782608120142.pdf; http://link.springer.com/article/10.1134/S1063782608120142/fulltext.html; https://dx.doi.org/10.1134/s1063782608120142; https://link.springer.com/article/10.1134/S1063782608120142
Pleiades Publishing Ltd
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