Systematic features of the formation of semiconductor nanostructures using a focused ion beam
Semiconductors, ISSN: 1063-7826, Vol: 46, Issue: 13, Page: 1604-1607
2012
- 5Citations
- 1Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
The systematic features of three-dimensional nanostructure fabrication using a focused ion beam are studied. The dependence of the depth of ion-beam-modified structures on the number of etching passes for the same ion dose is revealed with the aim of achieving accurate and predictable nanostructure formation. At the qualitative level, the effect of the thermodynamic parameters of Si, GaAs, and GaN semiconductors on the results of etching is analyzed. © 2012 Pleiades Publishing, Ltd.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84871307049&origin=inward; http://dx.doi.org/10.1134/s1063782612130052; http://link.springer.com/10.1134/S1063782612130052; http://link.springer.com/content/pdf/10.1134/S1063782612130052; http://link.springer.com/content/pdf/10.1134/S1063782612130052.pdf; http://link.springer.com/article/10.1134/S1063782612130052/fulltext.html; http://www.springerlink.com/index/pdf/10.1134/S1063782612130052; http://www.springerlink.com/index/10.1134/S1063782612130052; https://dx.doi.org/10.1134/s1063782612130052; https://link.springer.com/article/10.1134/S1063782612130052
Pleiades Publishing Ltd
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