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Polarized Retroreflection from Nanoporous III–V Semiconductors

Semiconductors, ISSN: 1063-7826, Vol: 52, Issue: 16, Page: 2068-2069
2018
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Metric Options:   Counts1 Year3 Year

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  • Citations
    1
    • Citation Indexes
      1

Article Description

Abstract: “Retroreflected light with strong linear polarization coinciding with that of the incident beams is detected from strongly absorbing nanoporous III–V semiconductors. Because of high polarization of retroreflected waves we assume that coherent backscattering is the underlying physical mechanism of this phenomenon”.

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