Crystalline-Phase Switching in Heterostructured Ga(As,P) Nanowires under the Impact of Elastic Strains
Semiconductors, ISSN: 1090-6479, Vol: 54, Issue: 10, Page: 1320-1324
2020
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
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Article Description
Abstract: The effect of elastic stresses on the Ga(As, P) crystalline phase of nanowires is studied. It is shown that the elastic stresses can lead to the stable growth of whisker nanocrystals in the metastable phase. The possibility of crystal-phase switching inside a GaP nanowire after the appearance of a Ga(As, P) insert is described.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85092371191&origin=inward; http://dx.doi.org/10.1134/s1063782620100267; https://link.springer.com/10.1134/S1063782620100267; https://link.springer.com/content/pdf/10.1134/S1063782620100267.pdf; https://link.springer.com/article/10.1134/S1063782620100267/fulltext.html; https://dx.doi.org/10.1134/s1063782620100267; https://link.springer.com/article/10.1134/S1063782620100267
Pleiades Publishing Ltd
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