Giant Magnetoresistance in a Metal–Organic Semiconductor–Metal Structure
Semiconductors, ISSN: 1090-6479, Vol: 55, Issue: 2, Page: 202-206
2021
- 3Citations
- 2Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
Abstract: The article presents the results of investigation of the giant magnetoresistance effect in a magnetic metal–organic semiconductor–non-magnetic metal structure with a magnetoresistive coefficient of ~2600%. The influence of a magnetic field on the concentration and mobility of charge carriers and the ferromagnetic–polymer potential barrier is studied. The possibility of theoretical interpretation of the investigated phenomenon based on a recently proposed model, which takes into account the effect of a hyperfine field on spin-dependent carrier hopping along the polymer chain, is considered.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85101248460&origin=inward; http://dx.doi.org/10.1134/s1063782621020184; http://link.springer.com/10.1134/S1063782621020184; http://link.springer.com/content/pdf/10.1134/S1063782621020184.pdf; http://link.springer.com/article/10.1134/S1063782621020184/fulltext.html; https://dx.doi.org/10.1134/s1063782621020184; https://link.springer.com/article/10.1134/S1063782621020184
Pleiades Publishing Ltd
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