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Giant Magnetoresistance in a Metal–Organic Semiconductor–Metal Structure

Semiconductors, ISSN: 1090-6479, Vol: 55, Issue: 2, Page: 202-206
2021
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Abstract: The article presents the results of investigation of the giant magnetoresistance effect in a magnetic metal–organic semiconductor–non-magnetic metal structure with a magnetoresistive coefficient of ~2600%. The influence of a magnetic field on the concentration and mobility of charge carriers and the ferromagnetic–polymer potential barrier is studied. The possibility of theoretical interpretation of the investigated phenomenon based on a recently proposed model, which takes into account the effect of a hyperfine field on spin-dependent carrier hopping along the polymer chain, is considered.

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