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Formation of the buffer layer of Silicon Suboxides SiO in the Si/SiO low-dimensional heterosystem after Si Ion implantation: Si L X-Ray emission spectra

Physics of the Solid State, ISSN: 1063-7834, Vol: 51, Issue: 11, Page: 2241-2246
2009
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Nanosized heterostructures n-Si/SiO with different thicknesses of the oxide film (20, 500 nm) after implantation by Si ions with energies of 12 and 150 keV have been investigated using Si L X-ray emission spectroscopy (the Si 3d3s → Si 2p electronic transition). The ion-beam modification of the interface has been revealed and studied for the heterostructure with a silicon dioxide thickness of 20 nm. An analysis of the Si L X-ray emission spectra has demonstrated that the Si ion implantation leads to the self-ordering of the structure of the initially amorphous SiO film 20 nm thick due to the effect of high doses. A mechanism of ion-beam modification of the insulator-semiconductor interface has been proposed. No sub-stantial transformation of the atomic and electronic structures of the heterostructure with a silicon dioxide thickness of 500 nm has been revealed after the ion implantation. © Pleiades Publishing, Ltd., 2009.

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