The ∼100 meV Photoluminescence Peak in n-Type AlGaAs Grown by MOCVD
Japanese Journal of Applied Physics, ISSN: 1347-4065, Vol: 23, Issue: 7, Page: L461-L463
1984
- 2Citations
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- Citations2
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Article Description
The low temperature photoluminescence peak at about 100 meV below the band-to-band transition in n-type AlGaAs grown by MOCVD has been investigated. The peak was found to appear only at lower growth temperatures (T\lesssim740°C) and to appear for a series of samples grown immediately after an exchange of one section of the gas flow system. The presence of the peak was found to be closely related to the quality of the epitaxial layer. © IOP Publishing Ltd.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0021463508&origin=inward; http://dx.doi.org/10.1143/jjap.23.l461; https://iopscience.iop.org/article/10.1143/JJAP.23.L461; https://dx.doi.org/10.1143/jjap.23.l461; https://validate.perfdrive.com/9730847aceed30627ebd520e46ee70b2/?ssa=294810ad-0e3a-4088-a3bf-b433e7ae11d2&ssb=63918234001&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1143%2FJJAP.23.L461&ssi=fac00770-cnvj-4efe-8d75-520fc593c1d2&ssk=botmanager_support@radware.com&ssm=023256736035889463069880529421816060&ssn=55195566dd053e07b20243f267d370c892260900c3c4-8990-4f21-a7ae23&sso=5946ef8c-bc564dd29dea5a5c106aa53ba6a85d41ea6ef24598fcb9cf&ssp=79709754671726522733172674060859474&ssq=78936657773515955144529239321836182481352&ssr=NTIuMy4yMTcuMjU0&sst=com.plumanalytics&ssu=&ssv=&ssw=&ssx=eyJfX3V6bWYiOiI3ZjYwMDBkNzYzNGE3Ni05ZTRkLTRjMmMtYjJhMC1mYzAzNGMyZjE1MjkxNzI2NTI5MjM5NDUzMjQ4NDk2Mjg1LTllYTQzN2QwM2ZkN2MyNDQzMDY5MzEiLCJ1em14IjoiN2Y5MDAwMGMxZDc2YmItMzk2MS00N2VjLTlkZGItNjdmYTVhZTY2ODdlNC0xNzI2NTI5MjM5NDUzMjQ4NDk2Mjg1LTljYmNkZjNhODBlMTM0ZmIzMDY5MTAiLCJyZCI6ImlvcC5vcmcifQ==
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