Ion-beam modification of amorphous wo film and its properties as a high-contrast inorganic ion resist
Japanese Journal of Applied Physics, ISSN: 1347-4065, Vol: 24, Issue: 1 R, Page: 92-94
1985
- 21Citations
- 2Captures
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Article Description
The effect of ion-beam irradiation on amorphous WO films was studied experimentally and in detail using thermionic Na ions with an accelerating voltage of 4-12kV. The films exhibit a resistive property of extremely high contrast (γ = 8) at ion doses beyond a threshold value D. The sensitivity (D = 5 × 10 C/cm+ at 5 kV), which is almost independent of the film thickness, decreases gradually with increasing accelerating voltage. The behavior of the optical absorption spectra and the ion-induced secondary electron emission yield of the irradiated films suggests the formation of sodium tungsten bronze, NaWO, by ion implantation. The resistive property can thus be explained from the metal transition of NaWO at the threshold dose. © 1985 American Institute of Physics.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0021863306&origin=inward; http://dx.doi.org/10.1143/jjap.24.92; https://iopscience.iop.org/article/10.1143/JJAP.24.92; https://dx.doi.org/10.1143/jjap.24.92; https://validate.perfdrive.com/fb803c746e9148689b3984a31fccd902/?ssa=43aa6b02-8e4d-4829-96aa-10f9082154af&ssb=10090294312&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1143%2FJJAP.24.92&ssi=6e5d1eb3-8427-4649-8318-98896968d9e7&ssk=support@shieldsquare.com&ssm=98017379761772470652993920625519771&ssn=17f386a95893e9fb0481da352d892a0a8334a8b91149-14d5-48cc-a91b42&sso=2acd1fda-70752116f6f6ff6d1deba6c4a81ddfd3a1ec14f83e362d3d&ssp=97645421211715430755171620126296055&ssq=91924881446936073795499121341131291975612&ssr=NTIuMy4yMTcuMjU0&sst=com.plumanalytics&ssu=&ssv=&ssw=&ssx=eyJ1em14IjoiN2Y5MDAwOTg4YWI3YWEtZTU1ZS00OTBmLTkxZDEtNTdjNTRlNzk4ZGQ2OS0xNzE1NDk5MTIxMzEyNzE1MzQ4MzE0LTdiMzg5NGQ2NTc4M2U0MmI2NTI5NiIsInJkIjoiaW9wLm9yZyIsIl9fdXptZiI6IjdmNjAwMGYyMmZhYzBhLTY0OTItNGQ4NC1iZDcxLTUxNGIzOGU4MjBhNzE3MTU0OTkxMjEzMTI3MTUzNDgzMTQtM2MzYWRjZWQ3OTM0YzNjZTY1Mjk5In0=
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