Atomic layer epitaxy of znse-(Cdse) (znse) short-period superlattice multiple quantum wells
Japanese Journal of Applied Physics, ISSN: 1347-4065, Vol: 31, Issue: 11, Page: L1583-L1585
1992
- 11Citations
- 4Captures
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Article Description
Atomic-layer epitaxy growth of ZnSe-(CdSe)(ZnSe) short-period superlattice multiple quantum wells (SPSQWs) has been investigated. High crystalline quality has been achieved in this system by the introduction of an ultra-short- period (CdSe)(ZnSe) superlattice in the well to replace a ZnCdSe alloy, due to the success in solving problems associ-ated with mismatch dislocations and alloying. Material characterizations have been performed by X-ray diffraction and photoluminescence. The critical thickness of CdSe on ZnSe has been determined to be less than four monolayers. © 1992 IOP Publishing Ltd.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0346302671&origin=inward; http://dx.doi.org/10.1143/jjap.31.l1583; https://iopscience.iop.org/article/10.1143/JJAP.31.L1583; https://dx.doi.org/10.1143/jjap.31.l1583; https://validate.perfdrive.com/9730847aceed30627ebd520e46ee70b2/?ssa=7bef17e5-ee69-45a6-aaca-3d8ecdfb6d7a&ssb=16825294965&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1143%2FJJAP.31.L1583&ssi=efeafddf-cnvj-488c-b0b8-5f24bc929b5c&ssk=botmanager_support@radware.com&ssm=819209341532779574009517162979726300&ssn=d2abe17a2c3b05b95dae0fc6f186051406330900c3c4-8990-4f21-ae3a3a&sso=691ccf8c-bc564dd29dea6ec3a10a240721efc182e5d8c0832345a5ae&ssp=03200801961726512612172674137926488&ssq=36964809647227044045829239507317043558775&ssr=NTIuMy4yMTcuMjU0&sst=com.plumanalytics&ssu=&ssv=&ssw=&ssx=eyJfX3V6bWYiOiI3ZjYwMDBkNzYzNGE3Ni05ZTRkLTRjMmMtYjJhMC1mYzAzNGMyZjE1MjkxNzI2NTI5MjM5NDUzMjY3MjMzMjgxLWJhNjRhY2MxZjgyMWFlZWQ0MDA4NTUiLCJyZCI6ImlvcC5vcmciLCJ1em14IjoiN2Y5MDAwMGMxZDc2YmItMzk2MS00N2VjLTlkZGItNjdmYTVhZTY2ODdlNS0xNzI2NTI5MjM5NDUzMjY3MjMzMjgxLThlMjY0NzE4ZWExNTViMTQ0MDA4MzEifQ==
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