PlumX Metrics
Embed PlumX Metrics

Atomic layer epitaxy of znse-(Cdse) (znse) short-period superlattice multiple quantum wells

Japanese Journal of Applied Physics, ISSN: 1347-4065, Vol: 31, Issue: 11, Page: L1583-L1585
1992
  • 11
    Citations
  • 0
    Usage
  • 4
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    11
    • Citation Indexes
      11
  • Captures
    4

Article Description

Atomic-layer epitaxy growth of ZnSe-(CdSe)(ZnSe) short-period superlattice multiple quantum wells (SPSQWs) has been investigated. High crystalline quality has been achieved in this system by the introduction of an ultra-short- period (CdSe)(ZnSe) superlattice in the well to replace a ZnCdSe alloy, due to the success in solving problems associ-ated with mismatch dislocations and alloying. Material characterizations have been performed by X-ray diffraction and photoluminescence. The critical thickness of CdSe on ZnSe has been determined to be less than four monolayers. © 1992 IOP Publishing Ltd.

Provide Feedback

Have ideas for a new metric? Would you like to see something else here?Let us know