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Properties of titanium layers deposited by collimation sputtering

Japanese Journal of Applied Physics, ISSN: 1347-4065, Vol: 31, Issue: 12, Page: L1746-L1749
1992
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  • Citations
    22
    • Citation Indexes
      22

Article Description

Properties of titanium (Ti) films deposited by collimation sputtering are studied. In Ti film déposition at the 0.5 /un ohmic contact area (aspect ratio: 3.6), conformality, y/x, defined by the thickness on the bottom, y, to the surface, x, is as low as 6% in conventional sputtering. However, it can be improved to 21% by employing collimation sputtering. Strongly (002)-oriented Ti film is deposited by conventional sputtering. Weakly (002)- and (Oll)-oriented grains, however, are grown in collimation film, with annealing at 650°C of the Ti film deposited on Si, different solid phase silicidation reactions occur at the Ti/Si. That is, metastable C49 TiSi grains are grown in conventional Ti film at 625- 650°C. In collimation film, C54 TiSi grains are preferentially grown at this température. This resuit indicates the formation of a stable C54 TiSi layer with lower sheet résistance. © 1992 IOP Publishing Ltd.

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