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Fabrication of ingaas strained quantum wire structures using selective-area metal-organic chemical vapor deposition growth

Japanese Journal of Applied Physics, ISSN: 1347-4065, Vol: 32, Issue: 10 A, Page: 1377-1379
1993
  • 28
    Citations
  • 0
    Usage
  • 4
    Captures
  • 0
    Mentions
  • 0
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Metrics Details

  • Citations
    28
    • Citation Indexes
      28
  • Captures
    4

Article Description

We fabricated In^Gai-^As strained quantum wire structures with various In compositions using a selective-area metal-organic chemical vapor deposition growth technique. Photoluminescence (PL) measurements at 14 K demonstrated that strained quantum wires of high quality were obtained when x is less than 0.35. Change of the full width at half-maximum of the PL peaks indicates that the structural dimensions of the quantum wires exceeded the critical thickness at around x = 0.4. © 1993 The Japan Society of Applied Physics.

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