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Determination of the photocarrier lifetime in amorphous silicon with the moving photocarrier grating technique

Japanese Journal of Applied Physics, ISSN: 1347-4065, Vol: 33, Issue: 10A, Page: 1386-1388
1994
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In this paper we have determined the lifetime of photogenerated carriers in semiconductors using a technique that does not require time or frequency resolved measurements of the photoconductivity. The lifetime is deduced from the DC-short circuit current that is induced by a laser interference grating of period A moving along the semiconductor surface with the velocity ν. We observe a maximum short circuit current density j at a velocity that corresponds to a frequency ω = 2πν/Λ of the moving interference grating. Based on a theoretical analysis of j we show that ω equals the inverse of the photocarrier lifetime τ, if the dielectric relaxation-time τ is short compared to τ and if the grating period is chosen large compared to the ambipolar diffusion length. © The Japan Society of Applied Physics.

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