Comparative study of C-V and transconductance of a Si δ-doped GaAs FET structure
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN: 0021-4922, Vol: 35, Issue: 4 A, Page: 2008-2011
1996
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Review Description
Anomalous peaks/dips have been found in the transconductance vs gate voltage characteristics of a Si δ-doped GaAs FET (Field Effect Transistor) at 4.2 K. Comparing the characteristics with the C-V concentration as a function of the gate voltage, the origin of the oscillatory behaviour is attributed to the intersubband scattering in the δ-doped layer.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0030121628&origin=inward; http://dx.doi.org/10.1143/jjap.35.2008; https://iopscience.iop.org/article/10.1143/JJAP.35.2008; https://dx.doi.org/10.1143/jjap.35.2008; https://validate.perfdrive.com/9730847aceed30627ebd520e46ee70b2/?ssa=2c47094d-0ce9-4a15-8373-2c85f868fbef&ssb=65080280751&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1143%2FJJAP.35.2008&ssi=ae3d425d-cnvj-45e4-abc9-d1e53f894923&ssk=botmanager_support@radware.com&ssm=94523379612412641264678753667571562&ssn=8368a9275f87db10813b1c161020dd30e2536402f074-4cb6-43cc-b9774f&sso=84f155d5-86644739f8a5b4bc3d862beeaa6df6d04c4cbfce768dbbdb&ssp=45320455551728680179172879776371160&ssq=31893539160948437827575883067523743993892&ssr=MzQuMjM2LjI2LjMx&sst=com.plumanalytics&ssu=&ssv=&ssw=&ssx=eyJyZCI6ImlvcC5vcmciLCJ1em14IjoiN2Y5MDAwNTIwMjU5NjctODczMS00OWRlLTg2NDgtY2NlNTViOWU0YmFjMy0xNzI4Njc1ODgzNDM2MTE1NzI2MzYwLTEzNzFkMjZkMTY3YWQ2ZTcyNjQ2NCIsIl9fdXptZiI6IjdmNjAwMDAxOTBiNDMwLTg3MWUtNGM4YS04OGM1LWE5MjlkZDk1MGFjOTE3Mjg2NzU4ODM0MzUxMTU3MjYzNjEtZDVhY2NjNjk1ZGVkZTc1YjI2NDY0In0=
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