Contactless estimation of the surface recombination velocity at high-low junction surfaces fabricated by the ion-implantation technique

Surface properties of ion-implanted silicon are investigated by the microwave photoconductivity decay method. The effective surface recombination velocity (S) is estimated by fitting of the experimental decay curve of excess carrier concentration with a theoretical decay curve. The results show that S is almost inversely proportional to the carrier concentration of the heavily doped layer formed by the ion-implantation for both types of high-low junction (nn, pp). Thus the present method is a powerful tool for surface characterization.