Formation of an atomically abrupt Si/Ge hetero-interface
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN: 0021-4922, Vol: 37, Issue: 3 SUPPL. B, Page: 1311-1315
1998
- 7Citations
- 2Captures
Metric Options: Counts1 Year3 YearSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
A novel method has been proposed for forming an abrupt interface in the Si/Ge heterostructures. Solid Si network of two monolayers in thickness was successfully grown on a Ge(100) surface. The Si/Ge transition layer, fablicated by the proposed method and a successive gas-source moleculer beam epitaxy was found to be atomically narrow, since it was less than 1 nm in width which is the resolution limit of the evaluation system.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0001170799&origin=inward; http://dx.doi.org/10.1143/jjap.37.1311; https://iopscience.iop.org/article/10.1143/JJAP.37.1311; https://dx.doi.org/10.1143/jjap.37.1311; https://validate.perfdrive.com/9730847aceed30627ebd520e46ee70b2/?ssa=e5868bbf-ff06-4ba8-8168-80091f48444a&ssb=96643291133&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1143%2FJJAP.37.1311&ssi=26bcaf4b-cnvj-425c-b263-8508467afad5&ssk=botmanager_support@radware.com&ssm=946114028337127051513662995340405293&ssn=9b013689851a235ea10f4de006cdd4e2ea2ee3e449d9-548a-4c5b-9f5c52&sso=39cb4caf-f497241c935fd27713f23b9190a6a307a1afb2dacb11a26c&ssp=08269120011732159377173283038309358&ssq=97651558691883691167726405589203975589588&ssr=NTIuMy4yMTcuMjU0&sst=com.plumanalytics&ssu=&ssv=&ssw=&ssx=eyJ1em14IjoiN2Y5MDAwZWUyZGRiODMtZjY4Ny00ZGY4LTliMTMtNDQ0OWIzZDhjZjczMTAtMTczMjEyNjQwNTI2Njc2MDUxMzIwNi0xMzMyYzg1NGQyZDdiN2MyMTUxMzM5IiwicmQiOiJpb3Aub3JnIiwiX191em1mIjoiN2Y2MDAwMmU0NDlkM2ItMDIzYi00NzI2LWIyOGEtZDQ0NTE5NTc2YTQ1MTczMjEyNjQwNTI2Njc2MDUxMzIwNi0zYWE0MGNiMTVhZWU2NmZiMTUxMzQ1In0=
IOP Publishing
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know