Properties of germanium-doped indium oxide thin films prepared by DC magnetron sputtering
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN: 0021-4922, Vol: 39, Issue: 4 A, Page: 1849-1854
2000
- 14Citations
- 12Captures
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Article Description
Ge-doped indium oxide (InO) thin films were prepared by dc magnetron sputtering. The electrical resistivity, 1.6 × 10 Ω·cm, of the film deposited at 200°C was obtained at 5.5% Ge doping. This was comparable with that of ITO (tin-doped InO) films. Furthermore, amorphous films with Ge content higher than 5.0% were obtained when the substrate temperature was 20°C, while they were obtained with Ge content higher than 7.0% when the substrate temperature was 200°C. The electrical resistivity of 6.0% Ge-doped amorphous InO film deposited at 20°C is 4.1 × 10 Ω·cm. The etching rate of the film by 5% HCl is 1400 A°/min and is nine times as high as that of ITO films. © 2000 The Japan Society of Applied Physics.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0011402254&origin=inward; http://dx.doi.org/10.1143/jjap.39.1849; https://iopscience.iop.org/article/10.1143/JJAP.39.1849; https://dx.doi.org/10.1143/jjap.39.1849; https://validate.perfdrive.com/9730847aceed30627ebd520e46ee70b2/?ssa=d376e20f-3b1e-42ef-a89f-5354d16290c3&ssb=27287231613&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1143%2FJJAP.39.1849&ssi=6a86c526-cnvj-4f83-9c3b-e19eceba803f&ssk=botmanager_support@radware.com&ssm=0737283762478731866821436538829274&ssn=0f7005cc65dddd450e3ec71f0ae0a398fe796e9c6c62-bdb9-4deb-86a1f7&sso=43ab4081-d7b4100be1c461bbdb74ebbbb3403885cfc27b0ad3174fd1&ssp=77293891121729769590172977090631013&ssq=71891565224648159821206969175239319916188&ssr=NTIuMy4yMTcuMjU0&sst=com.plumanalytics&ssu=&ssv=&ssw=&ssx=eyJ1em14IjoiN2Y5MDAwZjE4MDUxZmYtNjRmOS00MmIyLWI5NTAtOTA0ZDU2OWUyZWUyMi0xNzI5NzA2OTY5NTIzNDUyNzcwNzgtMmVjYjA0NjA5OGI0ZjRkZjY2NzkiLCJfX3V6bWYiOiI3ZjYwMDBlNWE3MWJkZC00NjE3LTQ1ZjUtOTI5OC0yNGVkY2Y5MDg3YTAxNzI5NzA2OTY5NTIzNDUyNzcwNzgtMjZmN2U0YmE5YjExNDY1ZDY2ODIiLCJyZCI6ImlvcC5vcmcifQ==
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