PlumX Metrics
Embed PlumX Metrics

Properties of germanium-doped indium oxide thin films prepared by DC magnetron sputtering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN: 0021-4922, Vol: 39, Issue: 4 A, Page: 1849-1854
2000
  • 14
    Citations
  • 0
    Usage
  • 12
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    14
    • Citation Indexes
      14
  • Captures
    12

Article Description

Ge-doped indium oxide (InO) thin films were prepared by dc magnetron sputtering. The electrical resistivity, 1.6 × 10 Ω·cm, of the film deposited at 200°C was obtained at 5.5% Ge doping. This was comparable with that of ITO (tin-doped InO) films. Furthermore, amorphous films with Ge content higher than 5.0% were obtained when the substrate temperature was 20°C, while they were obtained with Ge content higher than 7.0% when the substrate temperature was 200°C. The electrical resistivity of 6.0% Ge-doped amorphous InO film deposited at 20°C is 4.1 × 10 Ω·cm. The etching rate of the film by 5% HCl is 1400 A°/min and is nine times as high as that of ITO films. © 2000 The Japan Society of Applied Physics.

Provide Feedback

Have ideas for a new metric? Would you like to see something else here?Let us know