Zinc-blende-type cubic GaN single crystals prepared in a potassium flux
Japanese Journal of Applied Physics, Part 2: Letters, ISSN: 0021-4922, Vol: 39, Issue: 2 B
2000
- 27Citations
- 10Captures
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Article Description
Single crystals of zinc-blende-type cubic GaN (c-GaN, space group F 43m, lattice parameter a = 4.5062(9) angstrom) were synthesized at 750°C by the reaction of Ga and N in a potassium flux. The crystal structure was analyzed by single-crystal X-ray diffraction with an R1-factor of 2.1% (R1 = Σ ∥ F -F ∥/Σ|F|), where F is the observed structure factor and F is the calculated structure factor). A peak of near-band-edge emission was observed at 3.20eV in the cathodoluminescence spectrum measured at 25°C.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0033893026&origin=inward; http://dx.doi.org/10.1143/jjap.39.l146; https://iopscience.iop.org/article/10.1143/JJAP.39.L146; https://dx.doi.org/10.1143/jjap.39.l146; https://hkvalidate.perfdrive.com/?ssa=a99f6803-fa2b-4493-918a-adecd67b16c6&ssb=82632267889&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1143%2FJJAP.39.L146&ssi=222e5bf9-8427-4c71-b244-70391faf850a&ssk=support@shieldsquare.com&ssm=743418541612887249421183368667794345&ssn=5b6876f5cad36da877326ab07faa8b6fce1f58c5b45d-5e54-42ba-8efabe&sso=19919052-dcc83edb56381080e58f102014c91af9cfb85ea41885dc32&ssp=45309615201608212371160983653747481&ssq=47222612375618852562240433687309614307801&ssr=NTIuMy4yMTcuMjU0&sst=com.plumanalytics&ssv=&ssw=
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