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Photoluminescence, reflectance and photoreflectance spectra in CdS epilayers on Si(111) substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN: 0021-4922, Vol: 44, Issue: 8, Page: 5913-5917
2005
  • 14
    Citations
  • 0
    Usage
  • 7
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    14
    • Citation Indexes
      14
  • Captures
    7

Article Description

Photoluminescence (PL), reflectance and photoreflectance (PR) spectra were measured on hexagonal CdS films grown directly on hydrogen-terminated Si(111) substrates with 3° off-orientation by hot-wall epitaxy technique. By comparing the PL spectrum to the reflectance and PR spectra in the excitonic energy range, we have unambiguously identified free A- and B-exciton transitions in the CdS films on Si(111) substrates. The peak energies of the A- and B-exciton transitions slightly shift to lower energy by about 3 meV than that of bulk crystal. This peak shifts were caused by a tensile strain parallel to the epilayer surface due to a difference of the thermal expansion coefficients between the grown CdS film and Si substrate. Donor-acceptor pair emission and defect-related "Y" bands as well as free and bound exciton peaks in PL spectra were also studied by means of their temperature (10-250K) and excitation intensity dependences. © 2005 The Japan Society of Applied Physics.

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