Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN: 0021-4922, Vol: 44, Issue: 10, Page: 7424-7426
2005
- 11Citations
- 13Captures
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
We have fabricated GaN-based light-emitting diodes (LEDs) using transparent indium tin oxide (ITO) for p-type contacts. The current-voltage (I-V) characteristics of the devices have been studied. When annealed at 700°C, the p-n junction of the diodes became very leaky, and even electrical short circuits have been observed. According to scanning electron microscopy (SEM) and energy-dispersive X-ray spectrometer analyses (EDS), it was found that indium (In) diffused into the LED structure with defects such as threading dislocations (TDs) or V-pits. The defects provide leakage paths to cause short circuits in p-n junctions at high annealing temperatures. © 2005 The Japan Society of Applied Physics.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=31544470623&origin=inward; http://dx.doi.org/10.1143/jjap.44.7424; https://iopscience.iop.org/article/10.1143/JJAP.44.7424; https://dx.doi.org/10.1143/jjap.44.7424; https://validate.perfdrive.com/9730847aceed30627ebd520e46ee70b2/?ssa=05b29e4c-68b3-49c0-8c55-a97be3aa4f3d&ssb=08676257055&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1143%2FJJAP.44.7424&ssi=62413e68-cnvj-45fd-95e1-e1291f8d55a5&ssk=botmanager_support@radware.com&ssm=704675568340549755305365327762091868&ssn=f038c8fb1041bf0d4195446c4ee43a349a810900c3c4-8990-4f21-a30433&sso=be206f8c-bc564dd29dea16a673a8a37051b3b10000ab30554524434a&ssp=34409598771726534707172686007833522&ssq=19876743939381529259229239152288836137362&ssr=NTIuMy4yMTcuMjU0&sst=com.plumanalytics&ssu=&ssv=&ssw=&ssx=eyJ1em14IjoiN2Y5MDAwMGMxZDc2YmItMzk2MS00N2VjLTlkZGItNjdmYTVhZTY2ODdlNS0xNzI2NTI5MjM5NDUzMzEwMTUzOTcwLTgzMmFmZDdhYjRhNWY2OTc1MzAzNTkiLCJfX3V6bWYiOiI3ZjYwMDBkNzYzNGE3Ni05ZTRkLTRjMmMtYjJhMC1mYzAzNGMyZjE1MjkxNzI2NTI5MjM5NDUzMzEwMTUzOTcwLWRkOTNjZGRjZTExOTliZDE1MzA0MDciLCJyZCI6ImlvcC5vcmcifQ==
IOP Publishing
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know