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Surface cesium concentration and secondary ion emission from Si Ge bombarded by Cs

Japanese Journal of Applied Physics, ISSN: 0021-4922, Vol: 47, Issue: 4 PART 1, Page: 2234-2237
2008
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Depth profiles of cesium (Cs) are determined precisely by high-resolution medium energy ion scattering (MEIS) for a-SiGe:H films bombarded by Cs ions in secondary ion mass spectroscopy (SIMS). The useful yields of secondary positive and negative ions by Cs bombardment are found to be related to the surface Cs concentration. The present MEIS analysis reveals that the surface Cs concentration decreases with increasing Ge composition. The useful yields of secondary H and Si ions are enhanced exponentially, whereas secondary positive ion yields of Cs and SiCs are reduced almost exponentially with increasing Ge composition. Such behaviors are responsible for the change in the work function dependent upon the surface Cs concentration. It is also found that the useful yields of HCs and SiCs increase with increasing surface Cs concentration. This suggests a two-step process, M(H,Si) + Cs + Cs → MCs + Cs → MCs , after leaves the surface. The mechanism of enhancing or reducing secondary ion yields is discussed in detail in terms of the surface Cs concentration. © 2008 The Japan Society of Applied Physics.

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