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Crystal orientation control of bismuth layer-structured dielectric films using interface layers of perovskite-type oxides

Japanese Journal of Applied Physics, ISSN: 0021-4922, Vol: 50, Issue: 9 PART 3
2011
  • 12
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Metrics Details

  • Citations
    12
    • Citation Indexes
      12
  • Captures
    11

Article Description

Thin films of SrBiTiO, a kind of bismuth layer-structured dielectrics (BLSDs), were prepared on platinized silicon wafers buffered byperovskite-type oxide interface layers, (100)LaNiO/(111)Pt/TiO/(100)Si and (001)Ca NbOnanosheets/(111)Pt/TiO /(100)Si, by chemical solution deposition (CSD). The Ca NbO nanosheets were supported on a (111)Pt/TiO/(100)Si substrate by dip coating using an aqueous dispersion, while (100)LaNiO was prepared by CSD. The (00l ) planes of BLSD crystal were preferentially oriented on the surface of both substrates, which is caused by suitable lattice matching between the a-(b-)axis of BLSD and perovskite-type oxide layers. The film deposition on (001) CaNb O nanosheets yielded (001)-oriented BLSD films with higher crystallinity and smaller fluctuation in the tilting angle of the (001)BLSD plane than those on the (100)LaNiO interface layer. The dielectric constant (ε) of (001)-oriented SrBi TiO film on (001)CaNb Onanosheets/(111)Pt/TiO/(100)Si substrate was approximately 190, which was significantly stable against the change of frequency and bias voltage compared with that of the randomly-oriented SrBi TiO film. © 2011 The Japan Society of Applied Physics.

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