Electrochromic and Ex Situ IR and Raman Spectroelectrochemical Studies of LiInVO Films Charged/Discharged in the 0 < x < 1 Domain
Journal of the Electrochemical Society, ISSN: 0013-4651, Vol: 148, Issue: 6
2001
- 14Citations
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Article Description
InVO films were prepared using the sol-gel route from V-oxoisopropoxide and In-nitrate precursors. Films were made by dip coating deposition technique which allows the preparation of films with a thickness up to 230 nm by a single dipping cycle. The structure of crystalline InVO films obtained at 500°C was investigated using Raman and IR spectroscopies, which were combined with X-ray diffraction. The crystalline films consist of a monoclinic InVO-I phase with an admixed orthorhombic InVO-III phase. Electrochemical investigations revealed that the charge capacity of the crystalline films (500°C) is about -40 mC cm, significantly exceeding the ion storage capacity of amorphous films prepared at 300°C (-20 mC cm). In situ UV-visible spectrolectrochemical studies of amorphous and crystalline films showed that the coloration of the films is cathodic with a change in a photopic transmittance (ΔT) from 0.034 to 0.149, respectively. Crystalline films exhibit higher coloring than amorphous films; this is related to their higher coloration efficiency (η = 1.92 cm C ). The main focus is given to IR and Raman spectroelectrochemical studies of crystalline InVO films (500°C) galvanostatically charged in the 0 < x < 1 domain (LiInVO). Vibrational spectra revealed that the monoclinic InVO-1 phase remains unchanged in the 0 < x < 0.44 domain and transforms to the amorphous phase when charged in the 0.5 < x < 1 domain. Vibrational band changes observed in Raman and IR spectra of charged and discharged films are assessed and correlated w ith the spectral features of CeVO, FeVO, and FeVO films studied previously. © 2001 The Electrochemical Society. [DOI: 10.1149/1.1369375] All rights reserved.
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http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0002788708&origin=inward; http://dx.doi.org/10.1149/1.1369375; https://iopscience.iop.org/article/10.1149/1.1369375; https://syndication.highwire.org/content/doi/10.1149/1.1369375; https://dx.doi.org/10.1149/1.1369375; https://hkvalidate.perfdrive.com/?ssa=203a5f2a-7b96-4b42-a6e6-85fc15cb2498&ssb=13987244293&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1149%2F1.1369375&ssi=30bf3027-8427-40f1-b33e-6b02a390764f&ssk=support@shieldsquare.com&ssm=7546693448951937312350592861269809241&ssn=d0f0d05cea11a4b1dad9dd2bbbff5c3724c158c5b45d-5e54-42ba-87f306&sso=6e5fd052-dcc83edb5638d4bd1cb0ca25fc1ae54b4a14198574f42a42&ssp=69725875901608234386161006105324585&ssq=91389267691080580653240433690535973039112&ssr=NTIuMy4yMTcuMjU0&sst=com.plumanalytics&ssv=&ssw=
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