A silicon-embedded inductor surrounded by porous silicon for improved quality factor
ECS Journal of Solid State Science and Technology, ISSN: 2162-8777, Vol: 7, Issue: 6, Page: Q112-Q115
2018
- 2Citations
- 2Captures
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Article Description
A Backside Silicon-Embedded Inductor (BSEI) surrounded by porous silicon (PS) is reported for quality factor (Q) improvement. Successful formation of a conformal PS layer surrounding deep trenches (where the inductor coil is accommodated) is demonstrated. Experimental results show that although the DC resistance of the BSEI surrounded by PS is 73% higher than the conventional BSEI due to the non-optimized process, a 24% improvement in the peak Q and an 86% increase in the peak Q frequency can be achieved.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85058303674&origin=inward; http://dx.doi.org/10.1149/2.0141806jss; https://iopscience.iop.org/article/10.1149/2.0141806jss; https://syndication.highwire.org/content/doi/10.1149/2.0141806jss; https://dx.doi.org/10.1149/2.0141806jss; https://validate.perfdrive.com/9730847aceed30627ebd520e46ee70b2/?ssa=b9cff0ee-55ef-403b-a8ad-005787723c26&ssb=24566232751&ssc=https%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.1149%2F2.0141806jss&ssi=18ad9277-cnvj-4a92-8855-0c2ba2e8fa17&ssk=botmanager_support@radware.com&ssm=50178122387791976102882436666552448&ssn=b69ecd9dd0981c58ec2c27f560253daac35fc5b291d5-3251-43ce-aae219&sso=9ddc467a-59b08996083c1c87b86ee5b196dc7d551c83145304b54916&ssp=60238047041728461778172869684551332&ssq=40493965426921681616694961851870816720796&ssr=NTIuMy4yMTcuMjU0&sst=com.plumanalytics&ssu=&ssv=&ssw=&ssx=eyJ1em14IjoiN2Y5MDAwMWNjMDYxMDQtM2QzYy00YTRmLTkxODYtZjViODI2YjdjNDI5My0xNzI4NDk0OTYxMTM1MTU5MzA3ODk0LWFlZDJiODJkNTEyMmIxYjkxMDI4OCIsIl9fdXptZiI6IjdmNjAwMDY3OTlhODUwLWIwMDktNDI0Ny05YWM4LTcxY2YxMWZiNjYxODE3Mjg0OTQ5NjExMzUxNTkzMDc4OTMtNDI4MjdhOTUxMWUyNzU0NDEwMjg4IiwicmQiOiJpb3Aub3JnIn0=
The Electrochemical Society
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