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A silicon-embedded inductor surrounded by porous silicon for improved quality factor

ECS Journal of Solid State Science and Technology, ISSN: 2162-8777, Vol: 7, Issue: 6, Page: Q112-Q115
2018
  • 2
    Citations
  • 0
    Usage
  • 2
    Captures
  • 0
    Mentions
  • 55
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    2
  • Captures
    2
  • Social Media
    55
    • Shares, Likes & Comments
      55
      • Facebook
        55

Article Description

A Backside Silicon-Embedded Inductor (BSEI) surrounded by porous silicon (PS) is reported for quality factor (Q) improvement. Successful formation of a conformal PS layer surrounding deep trenches (where the inductor coil is accommodated) is demonstrated. Experimental results show that although the DC resistance of the BSEI surrounded by PS is 73% higher than the conventional BSEI due to the non-optimized process, a 24% improvement in the peak Q and an 86% increase in the peak Q frequency can be achieved.

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