Influence of the source doping concentration on the subthreshold swing (S) of Tunneling Field-Effect Transistors (TFETs)
Journal of Nanoscience and Nanotechnology, ISSN: 1533-4899, Vol: 16, Issue: 10, Page: 10241-10246
2016
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Article Description
The subthreshold swing (S) of tunneling field-effect transistors (TFETs) has been modeled by using the Landauer formula, Wentzel-Kramers-Brillouin (WKB) approximation, Kane's two band k·p model and Fermi-Dirac statistics. From the proposed model, it has been observed that TFET characteristics are determined by the Fermi-Dirac distribution in the subthreshold region and by the tunneling probability in the saturation region. Thus, higher source doping concentration leads to higher on-current thanks to the increase of tunneling probability. However, at the same time, high source doping concentration can make TFETs suffer from the metal-oxide-semiconductor FET (MOSFET)-like constant S due to the tail of the Fermi-Dirac distribution. Based on our proposed model, the design guideline has been proposed to optimize the source doping concentration.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84990986091&origin=inward; http://dx.doi.org/10.1166/jnn.2016.13135; http://openurl.ingenta.com/content/xref?genre=article&issn=1533-4880&volume=16&issue=10&spage=10241; http://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000010/art00014
American Scientific Publishers
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