PlumX Metrics
Embed PlumX Metrics

Influence of the source doping concentration on the subthreshold swing (S) of Tunneling Field-Effect Transistors (TFETs)

Journal of Nanoscience and Nanotechnology, ISSN: 1533-4899, Vol: 16, Issue: 10, Page: 10241-10246
2016
  • 0
    Citations
  • 0
    Usage
  • 3
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

Article Description

The subthreshold swing (S) of tunneling field-effect transistors (TFETs) has been modeled by using the Landauer formula, Wentzel-Kramers-Brillouin (WKB) approximation, Kane's two band k·p model and Fermi-Dirac statistics. From the proposed model, it has been observed that TFET characteristics are determined by the Fermi-Dirac distribution in the subthreshold region and by the tunneling probability in the saturation region. Thus, higher source doping concentration leads to higher on-current thanks to the increase of tunneling probability. However, at the same time, high source doping concentration can make TFETs suffer from the metal-oxide-semiconductor FET (MOSFET)-like constant S due to the tail of the Fermi-Dirac distribution. Based on our proposed model, the design guideline has been proposed to optimize the source doping concentration.

Bibliographic Details

Provide Feedback

Have ideas for a new metric? Would you like to see something else here?Let us know