Electrochemically deposited gallium oxide nanostructures on silicon substrates

We report a synthesis of β-GaO nanostructures on Si substrate by electrochemical deposition using a mixture of GaO, HCl, NHOH, and HO. The presence of Ga ions contributed to the deposition of GaO nanostructures on the Si surface with the assistance of applied potentials. The morphologies of the grown structures strongly depended on the molarity of GaO and pH level of electrolyte. β-GaO nanodot-like structures were grown on Si substrate at a condition with low molarity of GaO. However, GaO nanodot structures covered with nanorods on top of their surfaces were obtained at higher molarity, and the densities of nanorods seem to increase with the decrease of pH level. High concentration of Ga and OH ions may promote the reaction of each other to produce GaO nanorods in the electrolyte. Such similar nature of GaO nanorods was also obtained by using hydrothermal process. The grown structures seem to be interesting for application in electronic and optoelectronic devices as well as to be used as a seed structure for subsequent chemical synthesis of GaN by thermal transformation method.