A Facile Way to Fabricate High-Performance Solution-Processed n-MoS/p-MoS Bilayer Photodetectors
Nanoscale Research Letters, ISSN: 1556-276X, Vol: 10, Issue: 1, Page: 1-7
2015
- 24Citations
- 31Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Metrics Details
- Citations24
- Citation Indexes23
- 23
- CrossRef14
- Patent Family Citations1
- Patent Families1
- Captures31
- Readers31
- 31
Article Description
Two-dimensional (2D) material has many advantages including high carrier mobilities and conductivity, high optical transparency, excellent mechanical flexibility, and chemical stability, which made 2D material an ideal material for various optoelectronic devices. Here, we developed a facile method of preparing MoS nanosheets followed by a facile liquid exfoliation method via ethyl cellulose-assisted doping and utilizing a plasma-induced p-doping approach to generate t effectively the partially oxided MoS (p-MoS) nanosheets from the pristine n-type nanosheets. Moreover, an n-p junction type MoS photodetector device with the built-in potentials to separate the photogenerated charges is able to significantly improved visible light response. We have fabricated photodetector devices consisting of a vertically stacked indium tin oxide (ITO)/pristine n-type MoS nanosheets/p-MoS/Ag structure, which exhibit reasonably good performance illumination, as well as high current values in the range of visible wavelength from 350 to 600 nm. We believe that this work provides important scientific insights for photoelectric response properties of emerging atomically layered 2D materials for photovoltaic and other optoelectronic applications.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84948417084&origin=inward; http://dx.doi.org/10.1186/s11671-015-1161-3; http://www.ncbi.nlm.nih.gov/pubmed/26608537; https://link.springer.com/10.1186/s11671-015-1161-3; https://dx.doi.org/10.1186/s11671-015-1161-3; https://link.springer.com/article/10.1186/s11671-015-1161-3
Springer Science and Business Media LLC
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