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Pr:YLF mode-locked laser at 640 nm directly pumped by InGaN-diode lasers

Applied Optics, ISSN: 2155-3165, Vol: 55, Issue: 28, Page: 7782-7787
2016
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Article Description

We attain stable mode-locking of an InGaN laser-diode-pumped Pr:YLF laser with a pump power of 2.8 W using a semiconductor saturable absorption mirror. A maximum averaged output power of 65 mW was obtained with a 45-ps pulse width at a pulse repetition rate of 108 MHz. We also attempted Kerr-lens mode-locking by employing an SF57 glass in a cavity as a Kerr medium.

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