InP based very-low voltage electro-optic intensity modulators in conventional waveguides
Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2015, Page: 371p-null
2015
- 2Citations
- 6Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Conference Paper Description
Very-low drive voltage intensity modulators were fabricated in InP epitaxial layers containing MQW cores using conventional waveguides and processing. 1 cm long electrode devices have one arm driven V of 1.6 V at 1550 nm. © 2015 Optical Society of America.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84938885824&origin=inward; http://dx.doi.org/10.1364/iprsn.2015.im2b.2; https://www.osapublishing.org/abstract.cfm?URI=IPRSN-2015-IM2B.2; https://www.osapublishing.org/viewmedia.cfm?URI=IPRSN-2015-IM2B.2&seq=0; https://opg.optica.org/abstract.cfm?URI=IPRSN-2015-IM2B.2; https://dx.doi.org/10.1364/iprsn.2015.im2b.2
The Optical Society
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