Long-lived quantum coherence and nonlinear properties of a two-dimensional semiconductor quantum well

In this paper, we present an analytical solution to the Maxwell–Bloch equations of the two-level semiconductor quantum well, GaAs/AlGaAs. In addition, we discuss the effects of coherent Rabi oscillations (t) Ωand the frequency of the semiconductor system ν(t) on atomic occupation probabilities, ρ(t) and ρ(t), population inversion, ρ(t), and information entropies, H(σ), H(σ), and H(σ). We observe clearly the emergence of long-lived quantum coherence and the decay in curves for some special cases of Ω(t) and ν(t). Also, we show that the dynamic nonlinear properties of the system can be controlled by changing the values of the coherent Rabi oscillations Ω(t)and the frequency of the semiconductor system ν(t). Due to the lack of mathematical treatment of such systems, our study promises significant advantages for a large number of nonlinear dynamic systems, opening up a wide range of applications for semiconductor quantum wells.