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Design rules for p-i-n diode carriers sweeping in nano-rib waveguides on SOI

Optics Express, ISSN: 1094-4087, Vol: 19, Issue: 10, Page: 9915-9922
2011
  • 34
    Citations
  • 0
    Usage
  • 39
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    34
    • Citation Indexes
      34
  • Captures
    39

Article Description

In this paper we present a detailed analysis of the carrier lifetime for a p-i-n junction on silicon nano-rib waveguides. Several factors determining efficiency of carriers removal from the waveguiding region will be discussed. We compare different structure geometries and spacings between p and n doped regions to show the way to optimize electrons and holes sweeping for CW nonlinear optical devices. © 2011 Optical Society of America.

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