A 340-nm-band ultraviolet laser diode composed of GaN well layers
Optics Express, ISSN: 1094-4087, Vol: 21, Issue: 3, Page: 3133-3137
2013
- 21Citations
- 21Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations21
- Citation Indexes21
- 21
- CrossRef19
- Captures21
- Readers21
- 21
Article Description
We have demonstrated the laser operation of a short-wavelength ultraviolet laser diode with multiple-quantum-wells composed of GaN well layers. The laser action has been achieved in 340-nm-band far from the wavelength corresponding to GaN band gap under the pulsed current mode at room temperature. The device has been realized on the AlGaN underlying layer. The AlN mole fraction of the underlying layer is 0.1 lower than that of the underlying layer which was used for the previously reported 342 nm laser diode. These results provide a chance to the next step for a shorter-wavelength ultraviolet laser diode. © 2013 Optical Society of America.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84874055978&origin=inward; http://dx.doi.org/10.1364/oe.21.003133; http://www.ncbi.nlm.nih.gov/pubmed/23481771; https://www.osapublishing.org/oe/abstract.cfm?uri=oe-21-3-3133; https://www.osapublishing.org/viewmedia.cfm?URI=oe-21-3-3133&seq=0; https://opg.optica.org/oe/abstract.cfm?uri=oe-21-3-3133
The Optical Society
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