Impact of substrate characteristics on performance of large area plasmonic photoconductive emitters
Optics Express, ISSN: 1094-4087, Vol: 23, Issue: 25, Page: 32035-32043
2015
- 44Citations
- 30Captures
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Metrics Details
- Citations44
- Citation Indexes44
- 44
- CrossRef37
- Captures30
- Readers30
- 30
Article Description
We present a comprehensive analysis of terahertz radiation from large area plasmonic photoconductive emitters in relation with characteristics of device substrate. Specifically, we investigate the radiation properties of large area plasmonic photoconductive emitters fabricated on GaAs substrates that exhibit short carrier lifetimes through low-temperature substrate growth and through epitaxially embedded rare-earth arsenide (ErAs and LuAs) nanoparticles in superlattice structures. Our analysis indicates that the utilized substrate composition and growth process for achieving short carrier lifetimes are crucial in determining substrate resistivity, carrier drift velocity, and carrier lifetime, which directly impact optical-to-terahertz conversion efficiency, radiation power, radiation bandwidth, and reliability of large area plasmonic photoconductive emitters.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84959450293&origin=inward; http://dx.doi.org/10.1364/oe.23.032035; http://www.ncbi.nlm.nih.gov/pubmed/26698994; https://www.osapublishing.org/abstract.cfm?URI=oe-23-25-32035; https://www.osapublishing.org/viewmedia.cfm?URI=oe-23-25-32035&seq=0; https://opg.optica.org/abstract.cfm?URI=oe-23-25-32035; https://dx.doi.org/10.1364/oe.23.032035; https://opg.optica.org/oe/abstract.cfm?uri=oe-23-25-32035
The Optical Society
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