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Crack barriers for thick SiN using dicing

Optics Express, ISSN: 1094-4087, Vol: 30, Issue: 10, Page: 16725-16733
2022
  • 10
    Citations
  • 0
    Usage
  • 21
    Captures
  • 0
    Mentions
  • 0
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    10
    • Citation Indexes
      10
  • Captures
    21

Article Description

Silicon nitride (SiN) waveguides need to be thick to show low dispersion which is desired for nonlinear applications. However, high quality thick SiN produced by chemical vapour deposition (CVD) contains high internal stress, causing it to crack. Crack-free wafers with thick SiN can be produced by adding crack barriers. We demonstrate the use of dicing trenches as a simple single-step method to produce high quality (loss<0.5 dB/cm) crack-free SiN. We show Kerr-comb generation in a ring resonator to highlight the high quality and low dispersion of the waveguides.

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