Theory of bistability in two-segment diode lasers
Optics Letters, ISSN: 1539-4794, Vol: 10, Issue: 8, Page: 399-401
1985
- 17Citations
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Metrics Details
- Citations17
- Citation Indexes17
- 17
- CrossRef16
Article Description
Optical bistability in two-segment diode lasers with inhomogeneous injection is considered. Analytical solution of the rate-equation model gives a simple bistability condition. Slower carrier recombination in the absorber relative to the gain region is required for bistability when the gain and the absorber optical cross sections are equal. Carrier lifetimes, switch-on and switch-off powers, and currents are investigated for these bistable lasers. © 1985, Optical Society of America.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0021832735&origin=inward; http://dx.doi.org/10.1364/ol.10.000399; http://www.ncbi.nlm.nih.gov/pubmed/19724461; https://opg.optica.org/abstract.cfm?URI=ol-10-8-399; https://www.osapublishing.org/abstract.cfm?URI=ol-10-8-399; https://www.osapublishing.org/viewmedia.cfm?URI=ol-10-8-399&seq=0; https://dx.doi.org/10.1364/ol.10.000399; https://opg.optica.org/ol/abstract.cfm?uri=ol-10-8-399
Optica Publishing Group
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