Construction of organic/GaN heterostructures for DUV-to-NIR broadband photodetection
Optics Letters, ISSN: 1539-4794, Vol: 48, Issue: 21, Page: 5575-5578
2023
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Article Description
Herein, a broadband photodetector (BPD) is constructed with consistent and stable detection abilities for deep ultraviolet to near-infrared spectral range. The BPD integrates the GaN template with a hybrid organic semiconductor, PM6:Y6, via the spin-coating process, and is fabricated in the form of asymmetric metal-semiconductor-metal structure. Under an optimal voltage, the device shows consistent photoresponse within 254 to 850 nm, featuring high responsivity (10 to 60 A/W), photo-to-dark-current ratio over 103, and fast response time. These results show the potential of such organic/GaN heterojunctions as a simple and effective strategy to build BPDs for a reliable photo-sensing application in the future.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85175769700&origin=inward; http://dx.doi.org/10.1364/ol.503568; http://www.ncbi.nlm.nih.gov/pubmed/37910706; https://opg.optica.org/abstract.cfm?URI=ol-48-21-5575; https://dx.doi.org/10.1364/ol.503568; https://opg.optica.org/ol/abstract.cfm?uri=ol-48-21-5575
Optica Publishing Group
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