Physical and crystalline CdZnTe (0 ≤ x ≤ 1) properties

CdZnTe (0 ≤ x ≤ 1) and ZnTe are II-VI semiconductors, which are used in single crystalline structure to improve their crystalline and electrical properties. The CZT and ZnTe must possess high crystalline and electrical quality to be used, the first in x or γ-ray detectors, and as substrates for suitable epitaxial films for detecting IR radiation and the second for the manufacture of laser diodes and high intensity light emitters, both cases in the green wavelengths. In this work CZT was synthesized by the Bridgman method employing a temperature gradient of 10ºC/cm at speeds of 1.66 mm/h and 3.22 mm/h for different Zn concentrations. Meanwhile ZnTe was synthesized by physical vapor transport employing a temperature gradient of 6ºC/cm at a speed of 6 mm/day. Chemical etching and low and high transmission electron microscopy (LRTEM and HRTEM) were employed to determine the crystalline quality of all materials. It was observed that CZT ingots had an average dislocations density similar in all ingots grown in both speeds and all concentrations while the ZnTe showed a lower dislocation density. HRTEM micrographs showed in all semiconductors an important structural order. These characteristics showed that the crystalline quality of CZT and ZnTe was suitable for manufacturing optoelectronic devices. Furthermore, Electrical Conductivity, Thermal Diffusivity, Specific Heat and Seebeck Coefficient were measured as temperature function in all these materials. The influence of structural properties in physical properties was analyzed in order to determine the relationship with the observed crystal defects.