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Laser Ablation Behavior of RB-SiC by Femtosecond Laser Irradiation

SSRN, ISSN: 1556-5068
2022
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  • Usage
    363
    • Abstract Views
      318
    • Downloads
      45

Article Description

In this paper, the femtosecond laser ablation behavior of Reaction-Bonded Silicon Carbide (RB-SiC) was investigated. The ablation threshold of RB-SiC was calculated, which decreases (from 1.01 J/cm2 to 0.56 J/cm2) with increasing pulse number N and finally stabilized. And the ablation radius was predicted for different pulse energies with an error of less than 10%. To investigate the complex morphology of RB-SiC after irradiation, the ablation craters are discussed in two categories based on the SiC grain and Si matrix content in the irradiated region. The results show that LIPSS (periods of 0.76λ ~0.88λ for LSFL and 0.24λ ~ 0.32λ for HSFL), recondensation layer, and ruffles exist on the surface of Crater I, and structures such as grooves, convex, and holes exist on the surface of Crater II. Based on the surface morphology, microstructure, and physical phase analysis of the ablation craters, a preliminary model of the removal mechanism of the ablation craters by femtosecond laser irradiation was established. Finally, the variances of the ablation diameter and ablation volume with laser energy and pulse number are analyzed. These findings are expected to provide theoretical and experimental support for the precision processing of RB-SiC by femtosecond laser.

Bibliographic Details

Guangyi Ma; Yang Feng; Zhigang Dong; Renke Kang; Cheng Liu; Dongjiang Wu

Elsevier BV

Multidisciplinary; RB-SiC; femtosecond laser; Threshold fluence; Ablation crater; Ablation mechanism

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