Impact of Graphene as 2d Interlayer on the Growth of Gaas by Csvt on Si (100) and Gaas (100) Substrates

GaAs layers were grown using the closed space vapor transport (CSVT) technique on GaAs and Si substrates, with and without graphene (G) as 2D interlayer. We show that GaAs grown on G presents higher crystalline quality, compared to GaAs grown directly on the substrates without the G interlayer. X-ray diffraction scans suggest that the GaAs layers on G exhibited and preferred orientation, while GaAs grown directly on GaAs and Si substrates displayed three additional orientations, which were (100), (311), (331). Further investigation through pole figure measurements confirmed the preferred out-of-plane orientation and the presence of twin defects in GaAs layers. Remarkably, we observed a reduced presence of twins in GaAs grown on G compared to GaAs grown directly on the GaAs and Si substrates. Additionally, we found a significant impact on the morphology and on the growth rate of the GaAs on G, as determined using scanning electron microscopy and secondary ion mass spectrometry, respectively. These findings showed the importance of the G interlayer in enhancing the crystalline quality of GaAs growth by CSVT, demonstrating comparable results on both GaAs (100) and Si (100) substrates. This advancement holds significant promise for reducing the manufacturing cost of optoelectronic devices.