Comparative Performance Simulation Study of Germanium-Based Perovskite Solar Cells Using Scaps-1d
SSRN, ISSN: 1556-5068
2025
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
Ge-based perovskite solar cells (Ge-PSCs) have recently garnered significant interest due to their low toxicity and high abundance. Herein, we present an in-depth analysis of FTO/TiO2/absorber layer/Spiro-OMeTAD/Au solar cell structure using the SCAPS-1D software. Four types of Ge perovskites, namely, RbGeI3, CsGeI3, CH3NH3GeI3, and CH5N2GeI3, were considered as the absorber layers. The primary aim of this research is to compare the photovoltaic performance of inorganic and organic Ge-PSCs. The physical characteristics of the absorber layers such as thickness, defect density, shallow donor and acceptor densities, defect density of interfaces, series and shunt resistances, and operating temperature of the device were optimized to improve device performance. The generation and recombination profiles were analyzed to investigate losses in Ge-PSCs. Current densities and quantum efficiencies were measured for various hole transport layers (Spiro, P3HT, CuI, CuSCN, PEDOT: PSS) to identify the most effective HTL. Capacitance-voltage, Mott-Schottky, and capacitance-frequency analyses were conducted to determine the defect density of the absorber layer, built-in potential, and capacitance. The findings indicated that inorganic Ge-PSCs performed better than their organic counterparts due to their lower band gap and favorable optoelectronic properties. Here, RbGeI3 PSCs achieved the highest power conversion efficiency (PCE) of 26.83% followed by CsGeI3~19.30%, MAGeI3~12.35%, and FAGeI3~5.69%.
Bibliographic Details
Elsevier BV
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