Quantum-chemical modeling of the structure of strained silicon nanocrystals on a germanium substrate
Bulletin of the Russian Academy of Sciences: Physics, ISSN: 1062-8738, Vol: 72, Issue: 9, Page: 1245-1247
2008
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
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Article Description
The results of optimization of the atomic and electronic structure of strained silicon clusters Si on a germanium substrate are presented. The interaction of boundary nanocluster atoms with the substrate is studied. The effect of strain and impurities on the distribution of electronic states is analyzed. © Allerton Press, Inc. 2008.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=54349126219&origin=inward; http://dx.doi.org/10.3103/s1062873808090219; http://link.springer.com/10.3103/S1062873808090219; http://link.springer.com/content/pdf/10.3103/S1062873808090219; http://link.springer.com/content/pdf/10.3103/S1062873808090219.pdf; http://link.springer.com/article/10.3103/S1062873808090219/fulltext.html; https://link.springer.com/article/10.3103%2FS1062873808090219; http://www.springerlink.com/index/10.3103/S1062873808090219; https://dx.doi.org/10.3103/s1062873808090219; https://link.springer.com/article/10.3103/S1062873808090219
Allerton Press
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