Effect of Laser Exposure on the Process of Silicon Nanoparticle Fabrication
Bulletin of the Lebedev Physics Institute, ISSN: 1934-838X, Vol: 45, Issue: 11, Page: 353-355
2018
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
Silicon nanoparticles are obtained by nanosecond laser ablation of a single-crystal wafer under a deionized water layer. Nanoparticle generation mechanisms are studied depending on the incident energy density of laser radiation (7–12 J/cm) and scanning speed (10–750 mm/s). At a scanning speed of 150–200 mm/s, a maximum of the extinction coefficient of obtained colloidal solutions of nanoparticles is observed, which can be caused by an increase in their mass yield.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85058786555&origin=inward; http://dx.doi.org/10.3103/s1068335618110076; http://link.springer.com/10.3103/S1068335618110076; http://link.springer.com/content/pdf/10.3103/S1068335618110076.pdf; http://link.springer.com/article/10.3103/S1068335618110076/fulltext.html; https://dx.doi.org/10.3103/s1068335618110076; https://link.springer.com/article/10.3103/S1068335618110076
Allerton Press
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