Low-Temperature Direct Bonding of SiC to Si via Plasma Activation
Applied Sciences (Switzerland), ISSN: 2076-3417, Vol: 12, Issue: 7
2022
- 2Citations
- 6Captures
- 1Mentions
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Applied Sciences, Vol. 12, Pages 3261: Low-Temperature Direct Bonding of SiC to Si via Plasma Activation
Applied Sciences, Vol. 12, Pages 3261: Low-Temperature Direct Bonding of SiC to Si via Plasma Activation Applied Sciences doi: 10.3390/app12073261 Authors: Fengxuan Wang Xiang Yang
Article Description
We investigated the low-temperature direct bonding of SiC/Si via O plasma activation. After optimization, a high bonding efficiency of over 90% was obtained. Surface activation was achieved via reactive ion etching (RIE) O plasma for 30 s without significant bombardment damage. A smooth and void-free interface was observed by transmission electron microscopy (TEM), while a significant amorphous oxide layer was also detected. By increasing the annealing temperature from 150 to 300C, the amorphous layer decreased drastically from 48 nm to 11 nm. Based on systematic experiments and analysis, the mechanism of SiC/Si low-temperature plasma-activated bonding was discussed.
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