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Dislocation-free SiGe/Si heterostructures

Crystals, ISSN: 2073-4352, Vol: 8, Issue: 6
2018
  • 23
    Citations
  • 0
    Usage
  • 27
    Captures
  • 1
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    23
    • Citation Indexes
      23
  • Captures
    27
  • Mentions
    1
    • Blog Mentions
      1
      • Blog
        1

Review Description

Ge vertical heterostructures grown on deeply-patterned Si(001) were first obtained in 2012 (C.V. Falub et al., Science 2012, 335, 1330–1334), immediately capturing attention due to the appealing possibility of growing micron-sized Ge crystals largely free of thermal stress and hosting dislocations only in a small fraction of their volume. Since then, considerable progress has been made in terms of extending the technique to several other systems, and of developing further strategies to lower the dislocation density. In this review, we shall mainly focus on the latter aspect, discussing in detail 100% dislocation-free, micron-sized vertical heterostructures obtained by exploiting compositional grading in the epitaxial crystals. Furthermore, we shall also analyze the role played by the shape of the pre-patterned substrate in directly influencing the dislocation distribution.

Bibliographic Details

Francesco Montalenti; Fabrizio Rovaris; Roberto Bergamaschini; Leo Miglio; Marco Salvalaglio; Giovanni Isella; Fabio Isa; Hans von Känel

MDPI AG

Chemical Engineering; Materials Science; Physics and Astronomy; Chemistry

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